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features ? current-controlled output current source with 4 input channels low-power consumption output current up to 150 ma, read channel and channel 2 output current up to 200 ma , channel 3 and channel 4 total output current to 300 ma rise time 1.0 ns, fall time 1.1 ns on-chip rf oscillator control frequency and swings by use of 2 external resistors oscillator frequency range from 200 mhz to 600 mhz oscillator swing to 100 ma single 5v power supply common enable/disable input ttl/cmos control signals small sso16 package application dvd-ram dvd-rw dvd+rw cd-rw writable optical drives 1. description the T0820 is a laser diode driver for the operation of a grounded laser diode for writable optical drives. it includes four channels for four different optical power levels which are controlled by a separate ic. the read channel generates a continuous output level whereas channels 2 to 4 are provi ded as write channels with very fast switching speeds. write current pulses are enabled when a "low" signal is applied to the ne pins. all channels are summed together at the iout pin. read channel and channel 2 can contribute up to 150 ma and channels 3 and 4 up to 200 ma to the total output current of up to 300 ma. a total gain of 100 is provided between each reference current input and the selected output. although the reference inputs are current inputs voltage control is possible by using external resistors. frequency and swing can be set by two external resistors. oscillation is enabled by a "high" at the enosc pin. complete output cu rrent and oscillator switch-off is achieved by a `low' at the enable input. 4-channel laser driver with rf oscillator T0820 rev. 4506g?dvd?11/05
2 4506g?dvd?11/05 T0820 figure 1-1. block diagram channel 3 channel 2 i3 ne3 i2 ne2 read channel rf oscillator ir enosc enable iout i4 rf rs channel 4 ne4
3 4506g?dvd?11/05 T0820 2. pin configuration figure 2-1. pinning sso16 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 rf i3 i4 ne2 ne3 ne4 ir i2 iout gnd rs enable enosc vcc2 vcc1 vcc2 T0820 table 2-1. pin description pin symbol type function 1 ir analog input current, bias voltage approximately gnd 2 i2 analog input current, bias voltage approximately gnd 3 rf analog external resistor to gnd sets oscillator frequency 4 i3 analog input current, bias voltage approximately gnd 5 i4 analog input current, bias voltage approximately gnd 6 ne2 digital digital control of channel 2 (low active) 7 ne3 digital digital control of channel 3 (low active) 8 ne4 digital digital control of channel 4 (low active) 9 vcc2 supply +5v power supply for iout 10 enosc digital enables rf oscillator (high active) 11 enable digital enables output current (high active) 12 rs analog external resistor to gnd sets oscillator swing 13 gnd supply ground 14 iout analog output current source for laser diode 15 vcc2 supply +5v power supply for iout 16 vcc1 supply +5v power supply for circuit
4 4506g?dvd?11/05 T0820 3. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond t hose indicated in the operational sections of this specification is not implied. exposure to absolute maximum rati ng conditions for extended periods may affect device reliability . parameters symbol value unit supply voltage v cc ?0.5 to +6.0 v input voltage at ir, i2, i3, i4 v in1 ?0.5 to +0.8 v input voltage at ne2, ne3, ne4, enosc v in2 ?0.5 to v cc +0.5 v output voltage v out ?0.5 to v cc ?1 v power dissipation p max 0.7 (1) to 1 (2) w junction temperature t j 150 c storage temperature range t stg ?65 to +125 c notes: 1. r thja 115 k/w, t amb = 70c 2. r thja 115 k/w, t amb = 25c 4. thermal resistance parameters symbol value unit junction ambient r thja 115 (1) k/w note: 1. measured with multi-layer test board (jedec standard) 5. operating range parameters symbol value unit supply voltage range vcc 4.5 to 5.5 v input current i ir , i i2 , i i3 , i i4 < 2 ma external resistor to gnd to set oscillator frequency rf > 3 k ? external resistor to gnd to set oscillator swing rs > 100 ? operating temperature range t amb 0 to +70 c
5 4506g?dvd?11/05 T0820 6. electrical characteristics: general v cc = 5v, t amb = 25c, enable = high, ne2 = ne3 = ne4 = hi gh, enosc = low, unless otherwise specified no. parameters test condition pin symbol min. typ. max. unit type* 1power supply 1.1 supply current, power down enable = low, ne2 = ne3 = ne4 = low 9, 15, 16 icc pd2 0.3 ma a 1.2 supply current, read mode, oscillator disabled i ir = i i2 = i i3 = i i4 = 500 a 9, 15, 16 icc r1 95 ma a 1.3 supply current, read mode, oscillator enabled i ir = i i2 = i i3 = i i4 = 500 a, enosc = high, rs = 560 ? , rf = 7.5 k ? 9, 15, 16 icc r2 100 ma a 1.4 supply current, write mode i ir = i i2 = i i3 = i i4 = 500 a, ne2 = ne3 = ne4 = low 9, 15, 16 icc w 230 ma a 1.5 supply current, input off i ir = i i2 = i i3 = i i4 = 0 a 9, 15, 16 icc off 16 ma a 2 digital inputs 2.1 ne2/ne3/ne4 low voltage 6, 7, 8 vne lo 1.3 v a 2.2 ne2/ne3/ne4 high voltage 6, 7, 8 vne hi 2.0 v a 2.3 enable low voltage 11 ven lo 0.5 v a 2.4 enable high voltage 11 ven hi 3.0 v a 2.5 enosc low voltage 10 veo lo 0.5 v a 2.6 enosc high voltage 10 veo hi 3.0 v a 3 current at digital inputs 3.1 ne2/ne3/ne4 low current ne = 0v 6, 7, 8 ine lo ?300 a a 3.2 ne2/ne3/ne4 high current ne = 5v 6, 7, 8 ine hi 800 a a 3.3 enable low current enable = 0v 11 ien lo ?150 a a 3.4 enable high current enable = 5v 11 ien hi 100 a a 3.5 enosc low current enosc = 0v 10 ieo lo ?100 a a 3.6 enosc high current enosc = 5v 10 ieo hi 800 a a * type means: a: 100% tested b: 100% correlation tested c: characterized on samples d: design parameter
6 4506g?dvd?11/05 T0820 7. electrical characterist ics: laser amplifier v cc = 5v, t amb = 25c, enable = high, unless otherwise specified no. parameters test conditions pi n symbol min. typ. max. unit type* 4 laser amplifier 4.1 best fit current gain any channel (1) 14 gain 90 105 130 ma/ma a 4.2 best fit current offset any channel (1) 14 ios ?8 +4 ma a 4.3 output current linearity any channel (1) 14 ilin ?3 +3 % a 4.4 input current range input is sinking 1, 2, 4, 5 idac 0 3 ma c 4.5 output current read channel output is sourcing 14 i outr 150 ma a 4.6 output current channel 2 output is sourcing 14 i out2 150 ma a 4.7 output current channel 3 output is sourcing 14 i out3 200 ma a 4.8 output current channel 4 output is sourcing 14 i out4 200 ma a 4.9 output current read channel + channel 2 output is sourcing 14 i outr,2 150 ma a 4.10 output current channel 3 + channel 4 output is sourcing 14 i out3,4 200 ma a 4.11 total output current output is sourcing 14 i out 300 ma a 4.12 iout series resistor i out = 250 ma total r out to v cc -rail 14 r out 8 ? c 4.13 i in input impedance r in is to gnd 1, 2, 4, 5 r in 150 200 250 ? a 4.14 ne threshold temperature stabilized 6, 7, 8 vth 1.68 v b 4.15 output off current 1 enable = low ioff 1 1maa 4.16 output off current 2 ne2 = ne3 = ne4 = high, i ir = 0 a, i i2 = i i3 = i i4 = 500 a 14 ioff 2 1maa 4.17 output off current 3 ne2 = ne3 = ne4 = low, i ir = i i2 = i i3 = i i4 = 0 a 14 ioff 3 5maa 4.18 i out supply sensitivity, read mode i out = 40 ma, v cc = 5v 10%, read only 14 vse r ?4 ?1 %/v a 4.19 i out supply sensitivity, write mode i out = 80 ma, 40 ma read + 40 ma write, v cc = 5v 10% 14 vse w ?4 0.2 %/v a 4.20 i out current output noise i out = 40 ma, enosc = low 14 ino o 3 na/ rt-hz c 4.21 i out temperature sensitivity, read mode i out = 40 ma, read only 14 tse r ?500 ppm/c c 4.22 i out temperature sensitivity, write mode i out = 80 ma, 40 ma read + 40 ma write 14 tse w ?600 ppm/c c *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter note: 1. linearity of the amplifier is calculated usi ng a best fit method at th ree operating points of i out at 20 ma, 40 ma, and 60 ma. i out = (i in gain) + i os
7 4506g?dvd?11/05 T0820 8. electrical characteristic s: laser current amplifier output ac performance v cc = +5v, i out = 40 ma dc with 40 ma pulse, t amb = 25c, unless otherwise specified no. parameters test conditions pi n symbol min. typ. max. unit type* 5 laser current amplifier output ac performance 5.1 write rise time i out = 40 ma (read) + 40 ma (10% ? 90%) (1) 14 t rise 1.0 3.0 ns c 5.2 write fall time i out = 40 ma (read) + 40 ma (10% ? 90%) (1) 14 t fall 1.1 3.0 ns c 5.3 output current overshoot i out = 40 ma (read) + 40 ma (1) 14 os 5 % c 5.4 i out on prop delay ne 50% high-low to i out at 50% of final value 14 t on 2.0 ns c 5.5 i out off prop delay ne 50% low-high to i out at 50% of final value 14 t off 2.0 ns c 5.6 disable time enable 50% high-low to i out at 50% of final value 14 t dis 10 ns c 5.7 enable time enable 50% low-high to i out at 50% of final value 14 t en 50 ns c 5.10 amplifier bandwidth i out = 50 ma, all channels, ?3 db value 14 bw lca 20 mhz c 6 oscillator 6.1 oscillator frequency rf = 7.5 k ? rs = 560 ? 14 f osc 255 300 350 mhz a 6.2 oscillator temperature coefficient rf = 7.5 k ? rs = 560 ? 14 tc osc -150 ppm/ c c 6.3 disable time oscillator enosc 50% low-high to i out at 50% of final value 14 t diso 4nsc 6.4 enable time oscillator enosc 50% high-low to i out at 50% of final value 14 t eno 2nsc 6.5 oscillator swing rf = 7.5 k ? rs = 560 ? 14 s osc 35 55 mapp a *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter note: 1. load resistor at iout 10 ? , measurement with a 50- ? oscilloscope and a 39- ? series resistor
8 4506g?dvd?11/05 T0820 9. application information figure 9-1. oscillator frequency vs. resistor rf (rs = 560 ? ) figure 9-2. oscillator swing vs. resistor rs (rf = 7.5 k ? ) figure 9-3. oscillator frequen cy depending of swing (rs = 560 ? ) 200 250 300 350 400 450 500 550 45678910 rf ( kohm ) frequency (mhz) 0 20 40 60 80 100 120 0 300 600 900 1200 1500 rs ( ohm ) swing (ma pk-pk) 0 10 20 30 40 50 60 200 250 300 350 400 450 500 550 600 frequency ( mhz ) swing (ma pk-pk)
9 4506g?dvd?11/05 T0820 figure 9-4. transfer characteristic of channel 2 (gain = 112) figure 9-5. transfer characteristic of channel 3 and 4 (gain = 112) figure 9-6. step response, read channel: 50 ma, channel 3 = 200 mapp 0 50 100 150 200 250 300 0 500 1000 1500 2000 2500 3000 i2 ( a ) iout (ma) 0 50 100 150 200 250 300 0 500 1000 1500 2000 2500 3000 i3 ( a ) iout (ma)
10 4506g?dvd?11/05 T0820 figure 9-7. timing diagram figure 9-8. typical application circuit enable ne2 ne3 ne4 t en t r t on t r t on t r t on t f t off t f t off t f t off t dis vcc ld a n a l o g d i g i t a l ir i2 rf i3 i4 ne2 ne3 ne4 vcc1 vcc2 iout gnd rs enable enosc vcc2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 vcc
11 4506g?dvd?11/05 T0820 11. package information 10. ordering information extended type number package remarks T0820-tcqg sso16 taped and reeled, pb-free
printed on recycled paper. 4506g?dvd?11/05 ? atmel corporation 2005 . all rights reserved. atmel ? , logo and combinations thereof, everywhere you are ? and others, are registered trademarks or trademarks of atmel corporation or its subsidia ries. other terms and product names may be trademarks of others. disclaimer: the information in this document is provided in connection with atmel products. no license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of atmel products. except as set forth in atmel?s terms and condi- tions of sale located on atmel? s web site, atmel assumes no liability whatsoever and disclaims any express, implied or statutor y warranty relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particu lar purpose, or non-infringement. in no event shall atmel be liable for any direct, indirect, conseque ntial, punitive, special or i nciden- tal damages (including, without limitation, damages for loss of profits, business interruption, or loss of information) arising out of the use or inability to use this document, even if at mel has been advised of the possibility of such damages. atmel makes no representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the ri ght to make changes to specifications and product descriptions at any time without notice. atmel does not make any commitment to update the information contained her ein. unless specifically provided otherwise, atmel products are not suitable for, and shall not be used in, automotive applications. atmel?s products are not int ended, authorized, or warranted for use as components in applications intended to support or sustain life. atmel corporation atmel operations 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 487-2600 regional headquarters europe atmel sarl route des arsenaux 41 case postale 80 ch-1705 fribourg switzerland tel: (41) 26-426-5555 fax: (41) 26-426-5500 asia room 1219 chinachem golden plaza 77 mody road tsimshatsui east kowloon hong kong tel: (852) 2721-9778 fax: (852) 2722-1369 japan 9f, tonetsu shinkawa bldg. 1-24-8 shinkawa chuo-ku, tokyo 104-0033 japan tel: (81) 3-3523-3551 fax: (81) 3-3523-7581 memory 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 436-4314 microcontrollers 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 436-4314 la chantrerie bp 70602 44306 nantes cedex 3, france tel: (33) 2-40-18-18-18 fax: (33) 2-40-18-19-60 asic/assp/smart cards zone industrielle 13106 rousset cedex, france tel: (33) 4-42-53-60-00 fax: (33) 4-42-53-60-01 1150 east cheyenne mtn. blvd. colorado springs, co 80906, usa tel: 1(719) 576-3300 fax: 1(719) 540-1759 scottish enterprise technology park maxwell building east kilbride g75 0qr, scotland tel: (44) 1355-803-000 fax: (44) 1355-242-743 rf/automotive theresienstrasse 2 postfach 3535 74025 heilbronn, germany tel: (49) 71-31-67-0 fax: (49) 71-31-67-2340 1150 east cheyenne mtn. blvd. colorado springs, co 80906, usa tel: 1(719) 576-3300 fax: 1(719) 540-1759 biometrics/imaging/hi-rel mpu/ high speed converters/rf datacom avenue de rochepleine bp 123 38521 saint-egreve cedex, france tel: (33) 4-76-58-30-00 fax: (33) 4-76-58-34-80 literature requests www.atmel.com/literature

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